Why ito is conductive

Journal of Alloys and Compounds , 15 , Advanced Functional Materials , , Journal of the Taiwan Institute of Chemical Engineers , , Highly transparent and conducting In doped CdO synthesized by sol-gel solution processing. Journal of Materials Science , 56 22 , Materials , 14 15 , Effects of strain on ultrahigh-performance optoelectronics and growth behavior of high-quality indium tin oxide films on yttria-stabilized zirconia substrates.

Journal of Materials Science: Materials in Electronics , 32 16 , Cutri , Jarek Metro , Chinedu S. Madukoma , Joshua D. Shrout , Anthony J. Hoffman , Katherine A. Willets , Paul W.

Top transparent electrodes for fabricating semitransparent organic and perovskite solar cells. Journal of Materials Chemistry C , 9 29 , Reefaz Rahman , M. Materials Technology , 8 , Advanced Materials Interfaces , 8 11 , Bandara , A. Aththanayake , G. Kumara , P. Samarasekara , L. Ajith DeSilva , K.

Transparent and conductive F-Doped SnO2 nanostructured thin films by sequential nebulizer spray pyrolysis. MRS Advances , 6 16 , Nanomaterials , 11 5 , De Taeye , Liese B. Hubrechtsen , Ian Teirlynck , Philippe M. In-depth study of structural, morphological and electronic changes during conversion and alloying of ITO.

Journal of Materials Chemistry A , 9 16 , Sol-gel preparation and properties of electroconductive Sn—Al co-doped ZnO coated TiO2 whisker and its applications in textiles.

Influence of thickness on crystallographic, stereometric, optoelectronic, and electrochemical characteristics of electron-beam deposited indium tin oxide thin films. Materials Chemistry and Physics , , Grandal , A.

Borlaf , M. Non-treated low temperature indium tin oxide fabricated in oxygen-free environment to low-cost silicon-based solar technology.

Vacuum , , Solution-processed ITO nanoparticles as hole-selective electrodes for mesoscopic lead-free perovskite solar cells. Materials Advances , 2 2 , Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film. Investigation of hydrogen post-treatment effect on surface and optoelectronic properties of indium tin oxide thin films.

Journal of Alloys and Compounds , , Structural, optical and electrical characterization of spin coated SnO2:Mn thin films. Materials Today: Proceedings , 36 , Laser engineering of carbon materials for optoelectronic applications. Nanomaterials and Nanotechnology , 11 , Sol-gel synthesized indium tin oxide as a transparent conducting oxide with solution-processed black phosphorus for its integration into solar-cells.

Ohodnicki , Benjamin Chorpening. Murdoch , James G. Advanced Materials Interfaces , 7 18 , Journal of Materials Science: Materials in Electronics , 31 15 , Namboothiry , M.

Santhosh Kumar. Room temperature deposition of high figure of merit p-type transparent conducting Cu—Zn—S thin films and their application in organic solar cells as an efficient hole transport layer.

Conde-Gallardo , F. Brown , V. Sarma , Pradhyut Rajkumar. Al-doped ZnO transparent conducting oxide with appealing electro-optical properties — Realization of indium free transparent conductors from sputtering targets with varying dopant concentrations. Materials Today Communications , 23 , Origin of enhanced carrier mobility and electrical conductivity in seed-layer assisted sputtered grown Al doped ZnO thin films.

Thin Solid Films , , Small , 16 12 , Sathiaraj , R. Structure, optical and electrical properties of sol-gel derived Zn1. Optical transparent and reconfigurable metasurface with autonomous energy supply.

Journal of Physics D: Applied Physics , 53 6 , Solution processed W-doped In2O3 thin films with high carrier mobility. Ceramics International , 46 2 , Raina , Kamal K.

Urea and cow urine-based green approach to fabricate graphene-based transparent conductive films with high conductivity and transparency. Skorenko , Haian Qiu , Jeffrey M. Mativetsky , Derek B. Dwyer , William E. Bernier , Wayne E. Synthetic Metals , , Soler , H.

Rokunuzzaman , Bao Yue Zhang , Md. Fuhrer , Salvy P. Russo , Chris F. Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique. Nature Electronics , 3 1 , Nanomaterials , 10 1 , Cisneros-Contreras , A. Resolution improvement in Haacke's figure of merit for transparent conductive films. Results in Physics , 15 , Mei , Ludi Miao , Matthew J.

Schreiber , Lindsey E. Noskin , Hanjong Paik , Thomas E. Tiwald , Qiye Zheng , Richard T. Haasch , Davide G. Sangiovanni , Louis F. Piper , Darrell G. Adsorption-controlled growth and properties of epitaxial SnO films. Journal of Electronic Materials , 48 9 , Effect of aluminium concentration and reaction temperature on the structural and optical properties of Al-doped ZnO particles. Materials Research Express , 6 9 , a7.

Multimode AFM analysis of aluminum-doped zinc oxide thin films sputtered under various substrate temperatures for optoelectronic applications. Superlattices and Microstructures , , Results in Physics , 13 , Lorite , Jobin Varghese , Tapio Fabritius.

As shown in Figure 8A , with increasing annealing temperature, the ratio of oxygen atoms in the oxygen vacancy state to all oxygen atoms decreases, implying some oxygen vacancies can be effectively filled. The presence of oxygen defects in the ITO films is advantageous for the electrical conductivity of ITO, which is capable of generating electrons to form carriers.

Figure 8. According to relevant literature, the relationship between temperature and volatilization rate are approximately exponential Brandes and Brook, , indicating that the environmental temperature is a key factor that affects the volatilization rate.

This is the reason for the significant changes when annealing at higher temperatures. Figure 9. The comparisons of results related to this study are shown in Table 3. This study has great advantages in terms of stable conductivity at high temperatures. The annealing temperature and dwell time were varied successively. The fact that the electrical characteristics of ITO films are sensitive to the microstructure and the chemical composition can be verified by the results as follows:.

During the process of heating, the increase in crystalline size decreases the distance between the grain boundaries. In this case, the change in the conductivity is mainly determined by the chemical properties. In general, the rules for the conductivity changes in ITO films annealed under different annealing process parameters have been investigated by the systematic analysis of the microstructure and the chemical composition of the Sn and O elements. The failure-mechanism for conductive ITO films was analyzed at extremely high-temperatures.

Moreover, the ITO films show a promising stability after 2. HL and XL designed the experiments. XL performed the experiments. TS and QL analyzed the data. FZ and GX contributed the materials. XL and LG wrote the manuscript.

TF and YC contributed to the modification and suggestion in this manuscript. The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

Adurodija, F. Effects of laser irradiation energy density on the properties of pulsed laser deposited ITO thin films. A Mater. Process 81, — Highly conducting indium tin oxide ITO thin films deposited by pulsed laser ablation. Solid Films , 79— Ahmed, N. The effect of post annealing temperature on grain size of indium-tin-oxide for optical and electrical properties improvement.

Results Phys. Brandes, E. Smithells Metals Reference Book. Oxford: Butterworth Heinemann Press, — Google Scholar. Canhola, P. Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering. Solid Films , — Chung, C.

Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode. Diniz, A. The effects of various annealing regimes on the microstructure and physical properties of ITO In2O3:Sn thin films deposited by electron beam evaporation for solar energy applications. Energy 36, — Dong, L. Preparation of indium tin oxide ITO thin film with preferred orientation by sol—gel spin coating method.

Granqvist, C. Transparent and conducting ITO films: new developments and applications. Solid Films , 1—5. Gregory, O. High temperature stability of indium tin oxide thin films. Kanneboina, V. Energy , — Kato, K. Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes. Ke, S. Transparent indium tin oxide electrodes on muscovite mica for high-temperature-processed flexible optoelectronic devices.

ACS Appl. Interfaces 8, — Kim, H. Indium tin oxide thin films for organic light-emitting devices. Liu, J. Crystallization and conductivity mechanism of ITO films on different substrates deposited with different substrate temperatures. Wuhan Univ. Liu, X. Materials 10, 1—9. IOP Conf. Earth Environ. Meshram, N. Nishio, K. Preparation and electrical properties of ITO thin films by dip-coating process.

Park, Y. Coatings Technol. Premkumar, M. Effect of annealing temperature on structural, optical and humidity sensing properties of indium tin oxide ITO thin films. Qin, K. Reddy, I. Express 4, 1— Ren Xu, J. Sawada, M.